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Power-Delay Area-Efficient Processing-In-Memory Based on Nanocrystalline Hafnia Ferroelectric Field-Effect Transistors Kim, Giuk; Ko, Dong Han; Kim, Taeho; Lee, Sangho; Jung, Minhyun; Lee, Young Kyu; Lim, Sehee; et al, ACS APPLIED MATERIALS & INTERFACES, v.15, no.1, pp.1463 - 1474, 2023-01 |
The effect of ZrO2 buffer layer on electrical properties in Pt/SrBi2Ta2O9/ZrO2/Si ferroelectric gate oxide structure Choi, HS; Kim, EH; Choi, IH; Kim, YT; Choi, JH; Lee, JeongYong, THIN SOLID FILMS, v.388, no.1-2, pp.226 - 230, 2001-06 |
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