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Showing results 3 to 6 of 6

3
Improvement of electrical properties of ferroelectric gate oxide structure by using Al2O3 thin films as buffer insulator

Choi, HS; Lim, GS; Lee, JH; Kim, YT; Kim, SI; Yoo, DC; Lee, JeongYong; et al, THIN SOLID FILMS, v.444, no.1-2, pp.276 - 281, 2003-11

4
Interfacial Dipole Modulation Device With SiOX Switching Species

Kim, Giuk; Kim, Taeho; Jeon, Sanghun, IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, v.9, pp.57 - 60, 2021

5
Power-Delay Area-Efficient Processing-In-Memory Based on Nanocrystalline Hafnia Ferroelectric Field-Effect Transistors

Kim, Giuk; Ko, Dong Han; Kim, Taeho; Lee, Sangho; Jung, Minhyun; Lee, Young Kyu; Lim, Sehee; et al, ACS APPLIED MATERIALS & INTERFACES, v.15, no.1, pp.1463 - 1474, 2023-01

6
The effect of ZrO2 buffer layer on electrical properties in Pt/SrBi2Ta2O9/ZrO2/Si ferroelectric gate oxide structure

Choi, HS; Kim, EH; Choi, IH; Kim, YT; Choi, JH; Lee, JeongYong, THIN SOLID FILMS, v.388, no.1-2, pp.226 - 230, 2001-06

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