Showing results 1 to 4 of 4
Comprehensive study of high pressure annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films Oh, Changyong; Tewari, Amit; Kim, Kyungkwan; Kumar, Ulayil Sajesh; Shin, Changhwan; Ahn, Minho; Jeon, Sanghun, NANOTECHNOLOGY, v.30, no.50, 2019-10 |
Ka-band VCO with parasitic capacitance cancelling technique Lee, Wonho; Lee, S.; Choi, J.; So, J.; Kwon, Y., ELECTRONICS LETTERS, v.53, no.1, pp.38 - 39, 2017-01 |
Steep-Slope Transistor with an Imprinted Antiferroelectric Film Lee, Sangho; Lee, Yongsun; Kim, Taeho; Kim, Giuk; Eom, Taehyong; Shin, Hunbeom; Jeong, Yeongseok; et al, ACS APPLIED MATERIALS & INTERFACES, v.14, no.47, pp.53019 - 53026, 2022-11 |
The Opportunity of Negative Capacitance Behavior in Flash Memory for High-Density and Energy-Efficient In-Memory Computing Applications Kim, Taeho; Kim, Giuk; Lee, Young Kyu; Ko, Dong Han; Hwang, Junghyeon; Lee, Sangho; Shin, Hunbeom; et al, ADVANCED FUNCTIONAL MATERIALS, v.33, no.7, 2023-02 |
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