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Showing results 95861 to 95880 of 276234
| Gate delay characteristics of sub 30 nm MOS with non-overlapped source-drain to gate 신형철, 제9회 반도체학술대회, 한국반도체학술대회, 2002-02 |
| Gate Delay Modeling for Static Timing Analysis of Body-Biased Circuits Baek, Donkyu; Ship, Insup; Shin, Youngsoo, IEEE International Conference on Integrated Circuit Design and Technology (ICICDT), IEEE, 2012-05-31 |
| Gate driving method for synchronous rectifiers in phase-shifted full-bridge converter Baek, Jae-Il; Kim, Chong-Eun; Lee, Jae-Bum; Youn, Han-Shin; Moon, Gun-Woo, Power Electronics and ECCE Asia (ICPE-ECCE Asia), 2015 9th International Conference on, pp.753 - 758, IEEE, 2015-06-02 |
| Gate insulator for high mobility oxide TFT Park, Sang-Hee Ko; Kim, HO; Cho, SH; Ryu, MK; Yang, JH; Ko, Jong Beom; Hwang, CS, 12th Symposium on Thin Film Transistor Technologies, TFT 2014 - 2014 ECS and SMEQ Joint International Meeting, pp.123 - 128, Electrochemical Society Inc., 2014-10 |
| Gate leakage current in double-gate MOSFETs with Si/SiO2 interface model from first principle calculations Park, Y.; Kong, K.-J.; Chang, H.; Shin, Mincheol, 2010 10th IEEE Conference on Nanotechnology, NANO 2010, pp.1109 - 1112, IEEE, 2010-08-17 |
| Gate location design in injection molding of an automobile junction box with integral hinges Kim, HS; Son, JS; Im, Yong-Taek, JOURNAL OF MATERIALS PROCESSING TECHNOLOGY, v.140Special, no.SI, pp.110 - 115, 2003-09 |
| Gate Oxide Damage by Plasma Oxide Deposition and Via RIE Hyung-Cheol Shin, American Vacuum Society Plasma Etch 1992 Symposium, 1992 |
| Gate oxide damage from high dose implantation of hydrogen Choi, Yang-Kyu; Yun, C; Park, D; Cheung, N, the 13th International Conference on Ion Implantation Technology, 2000-09 |
| Gate oxide reliability concern associated with X-ray lithography Cho, Byung Jin; Kim, SJ; Ang, CH; Ling, CH; Joo, MS; Yeo, IS, Extended Abstract of the 200 International Conf. on Solid State Devices and Materials (SSDM), pp.0 - 0, 2000-08-28 |
| GATE TECHNOLOGY FOR 0.1-MU-M SI COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR USING G-LINE EXPOSURE AND DEEP-ULTRAVIOLET HARDENING Jeon, DukYoung; CHIN, GM; LEE, KF; YAN, RH; WESTERWICK, E; CERULLO, M, JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.12, no.4, pp.2800 - 2804, 1994 |
| GATE TECHNOLOGY FOR 89 GHZ VERTICAL DOPING ENGINEERED SI METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR Jeon, DukYoung; TENNANT, DM; KIM, YO; YAN, RH; LEE, KF; EARLY, K, JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.10, no.6, pp.2922 - 2926, 1992 |
| Gate voltage control of spin Seebeck effect 김정목; 강민구; Phouc, Cao-Van; 정종렬; 박병국, 2021 한국자기학회 하계학술대회, 한국자기학회, 2021-07-21 |
| Gate- versus defect-induced voltage drop and negative differential resistance in vertical graphene heterostructures Kim, Tae Hyung; Lee, Juho; Lee, Ryong-Gyu; Kim, Yong-Hoon, NPJ COMPUTATIONAL MATERIALS, v.8, no.1, 2022-03 |
| Gate-All-Around Silicon Nanowire MOSFETs on Bulk Substrate Choi, Yang-Kyu; Han, Jin-Woo; Ryu, Seong-Wan; Kim, Sungho; Kim, Chung-Jin; Ahn, Jae-Hyuk; Choi, Sung-Jin; et al, The 16th Korean Conference on Semiconductors, pp.648 - 649, 2009-02 |
| Gate-controlled Active Graphene Metamaterials Lee, Seung Hoon; Choi, Muhan; Kim, Teun-Teun; Lee, Seungwoo; Liu, Ming; Yin, Xiaobo; Choi, Hong Kyw; et al, Quantum Electronics and Laser Science Conference, Quantum Electronics and Laser Science Conference, 2012-05-06 |
| Gate-controlled active graphene metamaterials at terahertz frequencies Lee, Seung Hoon; Choi, Muhan; Kim, Teun-Teun; Lee, Seungwoo; Liu, Ming; Yin, Xiaobo; Choi, Hong Kyw; et al, OECC 2012, Opto-Electronics and Communications Conference (OECC), 2012-07-02 |
| Gate-controlled diode를 이용한 HgCdTe photodiode의 특성평가 이희철; 최종화, 제10회 적외선 영상센서 Conference, 1999 |
| Gate-controlled electromagnetically induced transparency analogue in graphene metamaterials Kim, Teun-Teun; Kim, Hyeon-Don; Kim, Woo Young; Min, Bumki; Zhang, Shuang, CLEO: QELS_Fundamental Science, CLEO_QELS 2014, Optical Society of America (OSA), 2014-06 |
| Gate-Induced Drain Leakage in MOSFETs Chul-Hi Han, International Symposium on Physics of Semiconductors and Applications, 1990 |
| Gate-Induced Drain-Leakage (GIDL) Programming Method for Soft-Programming-Free Operation in Unified RAM (URAM) Han, Jin-Woo; Ryu, Seong-Wan; Choi, Sung-Jin; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.30, no.2, pp.189 - 191, 2009-02 |
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