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Showing results 1 to 9 of 9

1
A Single BJT Bandgap Reference With Frequency Compensation Exploiting Mirror Pole

Kim, Myungjun; Cho, SeongHwan, IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.56, no.10, pp.2902 - 2912, 2021-10

2
(A) study on the ionic conductivity effect of polymer matrix on the electro-optic properties of PDLC = 고분자 기재의 이온전도도가 고분자분산액정의 전기광학특성들에 미치는 효과에 관한 연구link

Lee, Myong-Goo; 이명구; et al, 한국과학기술원, 1998

3
Analytical Modeling of IGZO Thin-Film Transistors Based on the Exponential Distribution of Deep and Tail States

Shin, Jae-Heon; Hwang, Chi-Sun; Cheong, Woo-Seok; Park, Sang-Hee Ko; Cho, Doo-Hee; Ryu, Minki; Yoon, Sung-Min; et al, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.54, no.1, pp.527 - 530, 2009-01

4
CMOS Ternary Logic with a Biristor Threshold Switch for Low Static Power Consumption

Han, Joon-Kyu; Yu, Ji-Man; Nam, Seo-Yeon; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.43, no.7, pp.1005 - 1008, 2022-07

5
Effect of 1MeV electron beam on transistors and circuits = 1MeV 전자빔 조사에 의한 반도체 소자의 기능저하에 관한 연구link

Lee, Tae-Hoon; 이태훈; et al, 한국과학기술원, 1998

6
Lowering the effective work function via oxygen vacancy formation on the GeO2/Ge interface

Lee, Tae In; Seo, Yujin; Moon, Jung Min; Ahn, Hyunjun; Yu, Hyun-Young; Hwang, Wan Sik; Cho, Byung Jin, SOLID-STATE ELECTRONICS, v.130, pp.57 - 62, 2017-04

7
One Biristor-Two Transistor (1B2T) Neuron With Reduced Output Voltage and Pulsewidth for Energy-Efficient Neuromorphic Hardware

Han, Joon-Kyu; Yun, Gyeong-Jun; Han, Seong-Joo; Yu, Ji-Man; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.1, pp.430 - 433, 2021-01

8
S-FLASH: A NAND Flash-based Deep Neural Network Accelerator Exploiting Bit-level Sparsity

Kang, Myeonggu; Kim, Hyeonuk; Shin, Hyein; Sim, Jaehyeong; Kim, Kyeonghan; Kim, Lee-Sup, IEEE TRANSACTIONS ON COMPUTERS, v.71, no.6, pp.1291 - 1304, 2022-06

9
Turn-around of threshold voltage shift in amorphous InGaZnO TFT under positive bias illumination stress

Kim, Juwon; Kim, Hyunjin; Oh, Jungyeop; Choi, Sung-Yool; Park, Hamin, SOLID-STATE ELECTRONICS, v.201, 2023-03

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