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Corrosion behavior of nitrogen-implanted zircaloy Kim, W; Jung, KS; Choi, BH; Kwon, Hyuk-Sang; Lee, SJ; Han, JG; Guseva, MI; et al, SURFACE & COATINGS TECHNOLOGY, v.76-77, no.2016-01-03, pp.595 - 599, 1995 |
Dual-$V_t$ Allocation with Constraint on Minimum Ion Implantation Width = 이온 임플란트의 최소 너비를 고려한 Dual $V_t$ 할당 기법link Lee, Yoo-Jong; 이유종; et al, 한국과학기술원, 2014 |
Effects of compositional and structural change on the corrosion behaviour of nitrogen implanted Zircaloy-4 Lee, SJ; Kwon, Hyuk-Sang; Kim, W; Choi, BH, MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, v.263, no.1, pp.23 - 31, 1999-04 |
Fabrication of excimer laser annealed poly-Si thin film transistor by using an elevated temperature ion shower doping Park, SC; Jeon, DukYoung, THIN SOLID FILMS, v.310, no.1-2, pp.317 - 321, 1997-11 |
Infrared Radiative Properties of Heavily Doped Silicon at Room Temperature Basu, S.; Lee, Bong Jae; Zhang, Z. M., JOURNAL OF HEAT TRANSFER-TRANSACTIONS OF THE ASME, v.132, no.2, 2010-02 |
Initial stage of nitridation on Si(100) surface using low-energy nitrogen ion implantation Kim K.-j.; Kang T.-H.; Ihm K.; Jeon C.; Hwang C.-C.; Kim B., SURFACE SCIENCE, v.600, no.17, pp.3496 - 3501, 2006 |
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