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Showing results 111921 to 111940 of 276511

111921
Inositol pyrophosphates inhibit synaptotagmin-dependent exocytosis

Lee, Tae Sun; Lee, Joo-Young; Yang, Yoosoo; Lee, Seulgi; Kim, Young-ran; Kong, Byoungjae; Jho, Yong Seok; et al, BIOPHYSICAL JOURNAL, v.106, no.2, pp.503A - 504A, 2014-01

111922
Inositol pyrophosphates inhibit synaptotagmin-dependent exocytosis

Lee, Tae Sun; Lee, Joo-Young; Kyung, Jae Won; Yang, Yoosoo; Park, Seung Ju; Lee, Seulgi; Pavlovic , Igor; et al, PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, v.113, no.29, pp.8314 - 8319, 2016-07

111923
Inositol pyrophosphates inhibit synaptotagmin-dependent exocytosis = 이노시톨 파이로포스페이트가 시냅토태그민에 의해 외포작용을 저해시키는 효과에 대한 연구link

Lee, Tae-Sun; 이태선; Cho, Yong-Hoon; 조용훈; et al, 한국과학기술원, 2016

111924
InP Double heterojunction bipolar transistors with chirped InGaAs/InP superlattice base-collector junction grown by CBE

Yang, Kyounghoon; Munns, G. O.; East, J. R.; Haddad,G. I., IEEE Cornell Conf, pp.278 - 286, IEEE, 1997-08-04

111925
InP HBT Technology based on new crystallographical etching characteristics

양경훈, ISRC Workshop, Compound Semiconductor Materials and Devices, pp.1 - 10, 2003

111926
InP HBT technology for Micro/mm-Wave Applications

양경훈, 무선통신용MMIC및 Module Workshop 2000, pp.231 - 242, 2000

111927
InP RTD/HBT를 이용한 초고속 디지털 회로 설계 = High speed digital circuit design using InP RTD/HBT technologylink

최선규; Choi, Sun-Kyu; et al, 한국과학기술원, 2004

111928
InP 기반 60 GHz RTD MMIC 발진기의 전력 결합에 대한 연구 = Study on a power combining technique of 60 GHz InP-based RTD MMIC oscillatorslink

신종원; Shin, Jongwon; et al, 한국과학기술원, 2015

111929
InP 기반 Heterogeneous RTD MMIC를 위한 Flip-chip-bonding 기술의 개발 = Development of a flip-chip-bonding technology for InP-based heterogeneous RTD MMICslink

신효종; Shin, Hyo-Jong; et al, 한국과학기술원, 2009

111930
InP 기반 PIN MMIC 기술을 이용한 밀리미터파 대역레이더 시스템용 제어 회로 개발

Yang, JG; 양경훈, 군수용초고주파부품워크샵, pp.240 - 240, 2009

111931
InP 기판을 이용한 소자 제조 방법

나노종합기술원; 이종원; 김영수; 임성규; 노길선

111932
InP 기판을 이용한 소자 제조 방법

나노종합기술원; 이종원; 김영수

111933
InP(001)(2×4) 재구성된 표면 위에 원자층 단위로 증착된 Co 박막의 자성 특성

신성철; 이정원; 정종률; 박용성, 한국자기학회지, v.14, no.3, pp.89 - 93, 2004-06

111934
InP-BASE:D GILBERT CELL PHASE DETECTOR FOR GENERATION OF STABLE DENSE WAVELENGTH DIVISION MULTIPLEXING CHANNEL OFFSETS USING AN OPTICAL PHASE-LOCKED LOOP

Goetz, P. G.; Eisele, H.; Syao, K. C.; Yang, Kyounghoon; Bhattacharya, P., IEEE MTT-S Int. Microwave Symposium, pp.1245 - 1248, IEEE, 1998-06-07

111935
InP-based device & IC technology for high frequency microelectronics

양경훈; Kim, T.; Yoon, M.; Kim,M.; Song, Y.; Lee, B., 2000 Fall Conference, Korea Institute of Military Science & technology, pp.181 - 186, 2000

111936
InP-Based High Speed Digital Logic Gates Using an RTD/HBT Heterostructure

Lin, C. H.; Yang, Kyounghoon; Gonzalez, A. F.; East, J. R.; Mazumder, P.; Haddad, G. I., IEEE Int. Conf. on InP and Related Material, pp.419 - 422, IEEE, 1999-05-16

111937
InP-based MMIC components for an optical phase-locked loop

Goetz, PG; Eisele, H; Yang, Kyounghoon; Syao, KC; Qasaimeh, O; Bhattacharya, P, IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.47, no.7, pp.1241 - 1250, 1999-07

111938
InP-based monolithic RFPD/HBT photoreceivers integrated with on-chip InPV-grooves

Lee, B; Yang, Kyounghoon, ELECTRONICS LETTERS, v.39, no.16, pp.1203 - 1204, 2003-08

111939
InP-based OEIC Photoreceivers using Shared Layer Integration Technology of Heterojunction Bipolar Transistors and Refracting-Facet Photodiodes

Lee, B; Song,Y; Yang, Kyounghoon, Int. Conf. on Solid State Devices and Materials, pp.182 - 183, 2003-09-16

111940
InP-Based Self-Aligned Internally Series-Connected RTD/HBT for Threshold Gate Ics

Park, J; Lee, J; Lee, J; Jeong, Y; Yang, Kyounghoon, IEEE International Conference On InP and Related Materials, IEEE, 2011-05

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