O-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors

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We find that O-vacancy (V(O)) acts as a hole trap and plays a role in negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors. Photoexcited holes drift toward the channel/dielectric interface due to small potential barriers and can be captured by V(O) in the dielectrics. While some of V(O)(+2) defects are very stable at room temperature, their original deep states are recovered via electron capture upon annealing. We also find that V(O)(+2) can diffuse in amorphous phase, inducing hole accumulation near the interface under negative gate bias. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3464964]
Publisher
AMER INST PHYSICS
Issue Date
2010-07
Language
English
Article Type
Article
Citation

APPLIED PHYSICS LETTERS, v.97, no.2, pp.022108 - 022108

ISSN
0003-6951
DOI
10.1063/1.3464964
URI
http://hdl.handle.net/10203/99911
Appears in Collection
PH-Journal Papers(저널논문)
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