Ultraviolet Photo-Annealing Process for Low Temperature Processed Sol-Gel Zinc Tin Oxide Thin Film Transistors
Sol-gel zinc tin oxide (ZTO) thin film transistors (TFTs) were fabricated at a low temperature of 250 degrees C using an ultraviolet (UV) photo-annealing process. A stable ZTO sol-gel solution was produced and showed considerable absorption in UV due to the incorporation of a chelating agent, acetylacetone, which also acts as a UV-activator. The UV photo-annealing and vacuum annealing improve the electrical performance of the ZTO TFT with mobility of 2 cm(2)/V.s by effective dissociation of organic groups and promotion of metal-oxide-metal bonds formation, confirmed by X-ray photoelectron spectroscopy of the ZTO films. (C) 2012 The Electrochemical Society. [DOI:10.1149/2.013204esl] All rights reserved.
- Publisher
- ELECTROCHEMICAL SOC INC
- Issue Date
- 2012
- Language
- English
- Article Type
- Article
- Keywords
PHOTOCHEMICAL SOLUTION DEPOSITION; ROOM-TEMPERATURE; SEMICONDUCTORS; FABRICATION
- Citation
ELECTROCHEMICAL AND SOLID STATE LETTERS, v.15, no.4, pp.91 - 93
- ISSN
- 1099-0062
- Appears in Collection
- MS-Journal Papers(저널논문)
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