High-Performance Q-Band MMIC Phase Shifters Using InGaAs PIN Diodes

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This paper presents the design and implementation of Q-band MMIC phase shifters using InGaAs PIN diodes. The topology using a thin-film microstrip line(TFMS) has been proposed to achieve the desired phase-shift as well as good loss characteristics. Five single-bit MMIC phase shifters have been implemented by using a developed BCB(benzocyclobutene)-based multi-layer fabrication technology. The developed phase shifters have less than 3.4 dB of insertion loss and better than 11 dB of input and output return loss in the frequency range of 43 to 47 GHz. To the authors’ knowledge, this is the first demonstration of high-performance InGaAs PIN diode-based MMIC phase shifters operating at Q-band frequencies.
Publisher
한국전자파학회
Issue Date
2009-09
Language
Korean
Citation

JOURNAL OF THE KOREAN INSTITUTE OF ELECTROMAGNETIC ENGINEERING AND SCIENCE, v.9, no.3, pp.159 - 163

ISSN
1598-2556
URI
http://hdl.handle.net/10203/99904
Appears in Collection
EE-Journal Papers(저널논문)
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