C-gs compensating V-band resistive mixer with low conversion loss at low LO power

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dc.contributor.authorJung, D. Y.ko
dc.contributor.authorPark, Chul Soonko
dc.date.accessioned2013-03-11T16:09:12Z-
dc.date.available2013-03-11T16:09:12Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2010-03-
dc.identifier.citationELECTRONICS LETTERS, v.46, no.6, pp.458 - 459-
dc.identifier.issn0013-5194-
dc.identifier.urihttp://hdl.handle.net/10203/99559-
dc.description.abstractA C-gs compensating resistive mixer with low conversion loss at a low LO power level is proposed. In the proposed mixer with an additional transistor, C-gs looking at the gate applying an LO signal is reduced by C-gd, C-gs, and C-ds of the additional transistor. This enables the proposed resistive mixer to have low conversion loss at a low LO power level. This enables the circuit to have high LO-RF isolation and facilitates an RF and IF matching network design. The fabricated chip size using 0.13 mu m CMOS technology is 0.71 x 0.69 mm(2). It achieves a conversion loss of 6.2 to 9.7 dB at an RF frequency of 56 to 63 GHz, and an input P-1dB of -2.5dBm at an LO power of 0dBm. This is believed to be the lowest conversion loss among V-band resistive mixers.-
dc.languageEnglish-
dc.publisherINST ENGINEERING TECHNOLOGY-IET-
dc.titleC-gs compensating V-band resistive mixer with low conversion loss at low LO power-
dc.typeArticle-
dc.identifier.wosid000276383500050-
dc.identifier.scopusid2-s2.0-77949696426-
dc.type.rimsART-
dc.citation.volume46-
dc.citation.issue6-
dc.citation.beginningpage458-
dc.citation.endingpage459-
dc.citation.publicationnameELECTRONICS LETTERS-
dc.identifier.doi10.1049/el.2010.2795-
dc.contributor.localauthorPark, Chul Soon-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordPlusTRANSMITTER-
dc.subject.keywordPlusTECHNOLOGY-
dc.subject.keywordPlusCMOS-
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