High-Performance Pentacene Thin-Film Transistors Fabricated by Printing Technology

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A high-performance bottom-contact pentacene thin-film transistor (TFT) is realized with its channel and electrodes fabricated by a simple printing process. By applying reverse offset printing of a nanosilver paste ink to the source/drain electrodes and organic vapor-jet printing to the thin pentacene layer, TFTs with a channel length of 20 mu m are realized in a precise yet relatively simple fashion. The oxide formed during the processing of the silver ink is shown to help reduce the injection barrier between the source and pentacene, making it possible to realize high-performance bottom-contact TFTs without special treatment for the electrodes.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2011-10
Language
English
Article Type
Article
Citation

IEEE ELECTRON DEVICE LETTERS, v.32, no.10, pp.1454 - 1456

ISSN
0741-3106
URI
http://hdl.handle.net/10203/99323
Appears in Collection
EE-Journal Papers(저널논문)
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