High-Performance Pentacene Thin-Film Transistors Fabricated by Printing Technology

Abstract

A high-performance bottom-contact pentacene thin-film transistor (TFT) is realized with its channel and electrodes fabricated by a simple printing process. By applying reverse offset printing of a nanosilver paste ink to the source/drain electrodes and organic vapor-jet printing to the thin pentacene layer, TFTs with a channel length of 20 mu m are realized in a precise yet relatively simple fashion. The oxide formed during the processing of the silver ink is shown to help reduce the injection barrier between the source and pentacene, making it possible to realize high-performance bottom-contact TFTs without special treatment for the electrodes.