Anneal temperature dependent Er3+/Tm3+ energy transfer and luminescence from Er and Tm co-doped silicon-rich silicon oxide
The effect of the anneal temperature on the Er3+/Tm3+ energy transfer and subsequent luminescence from Er/Tm co-doped, silicon-rich silicon oxide films are investigated. The anneal necessary for optimum photoluminescence (PL)from the co-doped film is substantially different for only Er- or Tm-doped films. Analysis and modeling of PL intensity and time-resolved PL indicate higher optimum anneal temperature is due to the anneal temperature dependent Er-Tm addition, the optimization of combined ultrabroad Er/Fm luminescence was discussed interactions which is tailored by the change of Er/Fm doping ratio and anneal temperature. (C) 2010 Elsevier B.V. All rights reserved
- Publisher
- ELSEVIER SCIENCE SA
- Issue Date
- 2010-09
- Language
- English
- Article Type
- Article
- Keywords
1.5 MU-M; EXCITATION; IONS; BAND; NANOCLUSTERS; NANOCRYSTALS; AMPLIFIER; EMISSION; GAIN; NM
- Citation
THIN SOLID FILMS, v.518, no.23, pp.7012 - 7015
- ISSN
- 0040-6090
- Appears in Collection
- NT-Journal Papers(저널논문)
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