Formation mechanisms of a nano-island array of Zn nanocrystals embedded in a SiO2 nanowire by using electrospinning and electron-beam irradiation

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A nano-island array of approximately 7-nm-diameter Zn single crystals embedded in a SiO2 nanowire was created by using electrospinning and electron-beam irradiation. Bright-field transmission electron microscopy (TEM) images, high-resolution TEM (HRTEM) images, energy dispersive spectroscopy (EDS), and fast-Fourier-transformed electron diffraction patterns showed that Zn nanocrystals were created inside the SiO2 nanowire. The formation mechanisms of Zn nanoparticles embedded in a SiO2 nanowire due to the decomposition of ZnO and SiO2 nanoparticles are described on the basis of the HRTEM images and the EDS profiles. (C) 2010 Elsevier B.V. All rights reserved.
Publisher
ELSEVIER SCIENCE BV
Issue Date
2011-05
Language
English
Article Type
Article
Keywords

QUANTUM-DOT; SILICON NANOCRYSTALS; ROOM-TEMPERATURE; STIMULATED DESORPTION; COULOMB-BLOCKADE; MEMORY DEVICES; LAYERS; SPECTROSCOPY; TRANSISTORS; MICROSCOPE

Citation

CURRENT APPLIED PHYSICS, v.11, no.3, pp.687 - 691

ISSN
1567-1739
DOI
10.1016/j.cap.2010.11.033
URI
http://hdl.handle.net/10203/98222
Appears in Collection
MS-Journal Papers(저널논문)
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