Conduction and Low-Frequency Noise Analysis in Al/alpha-TiOX/Al Bipolar Switching Resistance Random Access Memory Devices

Cited 25 time in webofscience Cited 0 time in scopus
  • Hit : 444
  • Download : 51
We investigated the low-frequency noise (LFN) properties of the bipolar switching resistance random access memories (RRAMs) for the first time with amorphous TiOX-based RRAM devices. The LFNs are proportional to 1/f for both high-resistance (HRS) and low-resistance states (LRS). The normalized noise (S-i/I-2) in HRS is around an order of magnitude higher than that in LRS. The random telegraph noise (RTN) is observed only in HRS, which represents that the dominant trap causing the RTN becomes electrically inactive by being filled with electrons in LRS. The voltage dependence of S-i/I-2 shows that the noise can be used to elucidate the operation mechanism of RRAM devices.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2010-06
Language
English
Article Type
Article
Keywords

RANDOM TELEGRAPH NOISE; 1/F; FILMS

Citation

IEEE ELECTRON DEVICE LETTERS, v.31, no.6, pp.603 - 605

ISSN
0741-3106
DOI
10.1109/LED.2010.2046010
URI
http://hdl.handle.net/10203/97825
Appears in Collection
MS-Journal Papers(저널논문)EE-Journal Papers(저널논문)
Files in This Item
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 25 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0