Impact of amorphous titanium oxide film on the device stability of Al/TiO2/Al resistive memory

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We have investigated the role of amorphous titanium oxide film in the reliable bipolar resistive switching of Al/TiO2/Al resistive random access memory devices. As TiO2 deposition temperature decreased, a more stable endurance characteristic was obtained. We proposed that the degradation of the bipolar resistive switching property of Al/TiO2/Al devices is closely related to the imperfect migration of oxygen ions between the top insulating interface layer and the oxygen-deficient titanium oxide during the set and reset operations. In addition, the dependence of the TiO2 film thickness on the switching property was also studied. As the thickness of the film increased, a reduction in the resistance of the high resistance state rapidly appeared. We attribute the improved endurance performance of thin and low-temperature grown TiO2 devices to the amorphous state with a low film density.
Publisher
SPRINGER
Issue Date
2011-03
Language
English
Article Type
Article
Keywords

NANOFILAMENTS; CURRENTS; BIPOLAR

Citation

APPLIED PHYSICS A-MATERIALS SCIENCE PROCESSING, v.102, pp.967 - 972

ISSN
0947-8396
DOI
10.1007/s00339-011-6278-3
URI
http://hdl.handle.net/10203/97725
Appears in Collection
MS-Journal Papers(저널논문)EE-Journal Papers(저널논문)
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