A transistor-based biosensor for the extraction of physical properties from biomolecules

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An analytical technique is proposed that uses an asymmetric double-gate field-effect transistor (FET) structure to characterize the electrical properties of biomolecules, including their permittivity and charge density. Using a simple measurement with the proposed FET structure, we are able to extract the physical properties (i.e., permittivity and charge density) of biomolecules. A reliable analytical tool for the characterization of biomolecules can be provided by the proposed FET structure without a complex measurement system. It is expected that the proposed method will be expanded into a universal analysis technique for the electrical evaluation of biomolecules in applications beyond biosensing. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4745769]
Publisher
AMER INST PHYSICS
Issue Date
2012-08
Language
English
Article Type
Article
Keywords

SOI MOSFETS; SENSITIVITY; SENSOR

Citation

APPLIED PHYSICS LETTERS, v.101, no.7

ISSN
0003-6951
DOI
10.1063/1.4745769
URI
http://hdl.handle.net/10203/97252
Appears in Collection
EE-Journal Papers(저널논문)
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