Unified random access memory (URAM) by integration of a nanocrystal floating gate for nonvolatile memory and a partially depleted floating body for capacitorless 1T-DRAM

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dc.contributor.authorRyu, Seong-Wanko
dc.contributor.authorHan, Jin-Wooko
dc.contributor.authorKim, Chung-Jinko
dc.contributor.authorKim, Sung-Hoko
dc.contributor.authorChoi, Yang-Kyuko
dc.date.accessioned2013-03-09T18:14:05Z-
dc.date.available2013-03-09T18:14:05Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2009-03-
dc.identifier.citationSOLID-STATE ELECTRONICS, v.53, no.3, pp.389 - 391-
dc.identifier.issn0038-1101-
dc.identifier.urihttp://hdl.handle.net/10203/97100-
dc.description.abstractThis paper describes a unified memory (URAM) that utilizes a nanocrystal SOI MOSFET for multi-functional applications of both nonvolatile memory (NVM) and capacitorless 1T-DRAM. By using a discrete storage node (Ag nanocrystal) as the floating gate of the NVM, high defect immunity and 2-bit/cell operation were achieved. The embedded nanocrystal NVM also showed 1T-DRAM operation (program/erase time = 100 ns) characteristics, which were realized by storing holes in the floating body of the SOI MOSFET, without requiring an external capacitor. Three-bit/cell operation was accomplished for different applications - 2-bits for nonvolatility and 1-bit for fast operation. (C) 2009 Elsevier Ltd. All rights reserved.-
dc.languageEnglish-
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD-
dc.subjectCELL-
dc.titleUnified random access memory (URAM) by integration of a nanocrystal floating gate for nonvolatile memory and a partially depleted floating body for capacitorless 1T-DRAM-
dc.typeArticle-
dc.identifier.wosid000264731300025-
dc.identifier.scopusid2-s2.0-61349111989-
dc.type.rimsART-
dc.citation.volume53-
dc.citation.issue3-
dc.citation.beginningpage389-
dc.citation.endingpage391-
dc.citation.publicationnameSOLID-STATE ELECTRONICS-
dc.identifier.doi10.1016/j.sse.2009.01.015-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorURAM-
dc.subject.keywordAuthor1T-DRAM-
dc.subject.keywordAuthorNonvolatile memory-
dc.subject.keywordAuthorNanocrystal-
dc.subject.keywordPlusCELL-
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