Bipolar resistive switching in amorphous titanium oxide thin film

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Using isothermal and temperature-dependent electrical measurements, we investigated the resistive switching mechanism of amorphous titanium oxide thin films deposited by plasma enhanced atomic layer deposition (PEALD) between two aluminum electrodes. We found a bipolar resistive switching (BRS) behavior only in the high temperature region (>140 K) and two activation energies (0.055 eV and 0.13 eV) for the carrier transport in the ohmic current regime. We attribute this discrepancy to the change of the bulk TiO(2) Fermi energy level (E(f)) induced by the reversible movement of oxygen ions in the vicinity of the Al top electrode region.
Publisher
WILEY-V C H VERLAG GMBH
Issue Date
2010-02
Language
English
Article Type
Article
Citation

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.4, no.1-2, pp.28 - 30

ISSN
1862-6254
DOI
10.1002/pssr.200903383
URI
http://hdl.handle.net/10203/97014
Appears in Collection
MS-Journal Papers(저널논문)EE-Journal Papers(저널논문)
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