Black Ge Based on Crystalline/Amorphous Core/Shell Nanoneedle Arrays

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Direct growth of black Ge on low-temperature substrates, including plastics and rubber is reported. The material is based on highly dense, crystalline/amorphous core/shell Ge nanoneedle arrays with ultrasharp tips (similar to 4 nm) enabled by the Ni catalyzed vapor-solid-solid growth process. Ge nanoneedle arrays exhibit remarkable optical properties, Specifically, minimal optical reflectance (<1%) is observed, even for high angles of incidence (similar to 75 degrees) and for relatively short nanoneedle lengths (-1 mu m). Furthermore, the. material exhibits high optical absorption efficiency with an effective band gap of similar to 1 eV. The reported black Ge could potentially have important practical implications For efficient photovoltaic and photodetector applications on nonconventional substrates.
Publisher
AMER CHEMICAL SOC
Issue Date
2010-02
Language
English
Article Type
Article
Keywords

SURFACE MIGRATION; NANOWIRES; SILICON; GROWTH; GOLD; MECHANISM

Citation

NANO LETTERS, v.10, no.2, pp.520 - 523

ISSN
1530-6984
DOI
10.1021/nl903366z
URI
http://hdl.handle.net/10203/96893
Appears in Collection
EE-Journal Papers(저널논문)
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