Highly durable and flexible memory based on resistance switching

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Resistance random access memory (RRAM) consisting of stacked Al/TiO(x)/Al structure is demonstrated on a flexible and transparent substrate. To improve cell to cell uniformity, TiO(x) formed by atomic layer deposition is used for resistive switching material. The simple cross-bar structure of the RRAM and good ductility of aluminum electrode results in excellent flexibility and mechanical endurance. Particularly, bipolar and unipolar resistive switching (BRS, URS) behavior appeared simultaneously were investigated. Depending on the current compliance, BRS or URS could be selectively observed. Furthermore, the permanent transition from BRS to URS was observed with a specific current compliance. To understand this transition behavior, the gamma-ray irradiation effect into resistive switching is primarily investigated. (C) 2009 Elsevier Ltd. All rights reserved.
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Issue Date
2010-04
Language
English
Article Type
Article
Keywords

TRANSISTORS; FILMS

Citation

SOLID-STATE ELECTRONICS, v.54, no.4, pp.392 - 396

ISSN
0038-1101
DOI
10.1016/j.sse.2009.10.021
URI
http://hdl.handle.net/10203/96850
Appears in Collection
EE-Journal Papers(저널논문)
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