High-Performance Polycrystalline Silicon TFT on the Structure of a Dopant-Segregated Schottky-Barrier Source/Drain

Cited 12 time in webofscience Cited 0 time in scopus
  • Hit : 257
  • Download : 0
A high-performance polycrystalline silicon (poly-Si) thin-film transistor (TFT) with Schottky-barrier (SB) source/drain (S/D) junctions is proposed. A p-channel operation on the intrinsic nickel (Ni) silicided S/D was successfully realized with the aid of a thin active layer, despite the fact that the Ni silicided material shows a high SB height (SBH) for holes. Furthermore, for n-channel operation, the dopant-segregation technique implemented on the intrinsic Ni silicide was utilized to reduce the effective SBH for electrons. The results show a higher on-current due to the lower parasitic resistance as well as superior immunity against short-channel effects, compared to the conventional poly-Si TFT composed of p-n S/D junctions.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2010-03
Language
English
Article Type
Article
Keywords

POLY-SI; INTEGRATION; TRANSISTORS; TECHNOLOGY; FILMS

Citation

IEEE ELECTRON DEVICE LETTERS, v.31, no.3, pp.228 - 230

ISSN
0741-3106
DOI
10.1109/LED.2009.2038348
URI
http://hdl.handle.net/10203/96811
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 12 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0