P-Channel Nonvolatile Flash Memory With a Dopant-Segregated Schottky-Barrier Source/Drain

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A p-channel dopant-segregated-Schottky-barrier (DSSB) device based on a SOI FinFET structure is proposed for silicon-oxide-nitride-oxide-silicon type Flash memory, providing the feasibility of bit-by-bit operation through the aid of a symmetric program/erase operation. This concept is based on utilizing injected holes due to enhanced Fowler-Nordheim tunneling probability triggered by the sharpened energy band bending at the DSSB source/drain junctions as a programming method and the tunneled electrons from a silicon channel as an erasing method. As a result, a threshold voltage window of nearly 4 V and good data retention are achieved within a P/E time of 3.2 mu s.
Publisher
IEEE-Inst Electrical Electronics Engineers Inc
Issue Date
2010-08
Language
English
Article Type
Article
Keywords

HIGH-PERFORMANCE; FINFET; SONOS; TECHNOLOGY

Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.57, no.8, pp.1737 - 1742

ISSN
0018-9383
DOI
10.1109/TED.2010.2051331
URI
http://hdl.handle.net/10203/96652
Appears in Collection
EE-Journal Papers(저널논문)
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