Damage immune field effect transistors with vacuum gate dielectric

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A damage immune field effect transistor with a vacuum gate dielectric is presented. The device consists of a suspended silicon nanowire and an independently controlled double-gate. The vacuum gate dielectric with a thickness of 20 nm is formed by a sacrificial layer deposition and removal process. The vacuum gate dielectric is found to be resistant to radiation-induced damage. Furthermore, it shows a very high tolerance against hot-carrier stress. The excellent stability in the radiative environment and high electric field is attributed to the absence of material in the vacuum gate dielectric. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3520618]
Publisher
A V S AMER INST PHYSICS
Issue Date
2011-01
Language
English
Article Type
Article
Keywords

INJECTION; CHANNEL; DEVICES; MOSFET; OXIDE; MEMS

Citation

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.29, no.1, pp.110141 - 110144

ISSN
1071-1023
URI
http://hdl.handle.net/10203/96106
Appears in Collection
EE-Journal Papers(저널논문)
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