Low-Temperature Annealing for Highly Conductive Lead Chalcogenide Quantum Dot Solids

Cited 33 time in webofscience Cited 0 time in scopus
  • Hit : 376
  • Download : 0
Electrical conductivity in quantum dot solids is crucial for application in devices. In addition to the well-known ligand exchange strategies for enhanced conductivity, the current study examined the optical, structural, and electrical properties of ethanedithiol-treated layer-by-layer (LbL) assembled quantum dot solid (QDS) films following low-temperature annealing (room temperature to 170 degrees C). As the annealing temperature increased, it was induced that the average separation between nanocrystal quantum dots is decreased, and accordingly, the overall conductivity of the QDS increased exponentially. From a simplified percolation model, the activation energy of temperature-dependent quantum dot attachment was estimated to be around 0.26-0.27 eV both for PbS and PbSe quantum dot solids. Furthermore, the results of this study indicated that device applications requiring higher conductivity, attainable through high-temperature annealing, may also require repassivation after annealing.
Publisher
AMER CHEMICAL SOC
Issue Date
2011-01
Language
English
Article Type
Article
Keywords

MULTIPLE EXCITON GENERATION; PBSE NANOCRYSTAL SOLIDS; ELECTRICAL-PROPERTIES; COLLOIDAL PBSE; SOLAR-CELLS; FILMS; ASSEMBLIES; TRANSISTORS; INSULATORS; AIR

Citation

JOURNAL OF PHYSICAL CHEMISTRY C, v.115, no.3, pp.607 - 612

ISSN
1932-7447
URI
http://hdl.handle.net/10203/95610
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 33 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0