Development and Application of Er-Doped Silicon-Rich Silicon Nitrides and Er Silicates for On-Chip Light Sources

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On-chip light sources are a critical part for an integrated Si photonic technology, yet they lag other photonic components in their level of development. In this chapter, Er used as an optical dopant and utilizing its intra-4f transition at 1.54 mu m will be introduced as a viable means for on-chip light generation that has the advantage of being compatible with long-distance telecom as well. First, a general introduction to the topic of developing a Si-based/compatible light source will be presented, with emphasis on the need for a novel high-index material for Er-doping that can provide both a higher Er content and refractive index than has been reported so far. Second, Er-doped silicon-rich silicon nitride (SRSN) and Er silicates will be introduced as a promising host material for compact on-chip light sources. Finally, results of fabricating basic photonic components using Er-doped SRSN and Er-silicates will be presented.
Publisher
SPRINGER-VERLAG BERLIN
Issue Date
2011
Language
English
Article Type
Review; Book Chapter
Keywords

WAVE-GUIDE AMPLIFIERS; ROOM-TEMPERATURE LUMINESCENCE; COOPERATIVE UP-CONVERSION; SODA-LIME SILICATE; MU-M LUMINESCENCE; RARE-EARTH IONS; OPTICAL-PROPERTIES; POROUS SILICON; SPECTROSCOPIC PROPERTIES; EXCITATION SPECTROSCOPY

Citation

SILICON PHOTONICS II: COMPONENTS AND INTEGRATION BOOK SERIES: TOPICS IN APPLIED PHYSICS, v.119, pp.95 - 130

ISSN
0303-4216
DOI
10.1007/978-3-642-10506-7_4
URI
http://hdl.handle.net/10203/95526
Appears in Collection
NT-Journal Papers(저널논문)
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