Characterization of Low-Temperature Stress Hump in Relation to Phase Formation Sequence of Nickel Silicide

The stress hump phenomenon observed at a low temperature of approximately 140C during in situ stress-temperature measurement of sputtered Ni thin film on a (001) Si substrate has been investigated. We found that the stress hump was not related to the formation of NiSi2, but originated from the thickening of an amorphous Ni–Si intermixing layer in the temperature range of 100–140C followed by the formation of the Ni2Si phase at temperatures above 140C.
Publisher
The Japan Society of Applied Physics
Issue Date
2005
Keywords

NiSi; stress hump; phase formation sequence; interdiffusion

Citation

Japanese Journal of Applied Physics, Vol.44, No.1A, pp.145-146

DOI
10.1143/JJAP.44.145
URI
http://hdl.handle.net/10203/9551
Appears in Collection
MS-Journal Papers(저널논문)
Files in This Item
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