Bipolar resistance switching driven by tunnel barrier modulation in TiOx/AlOx bilayered structure

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A TiOx/AlOx resistance switching device was investigated as a prototype of a bilayered structure composed of a "transport layer" and a "tunnel layer." Study of its carrier transport led to the conclusion that resistance switching is driven by the modulation of the AlOx tunnel barrier. Redox in the AlOx layer causes the decrease in tunneling resistance that scales with the inverse of the area. The appropriate switching characteristics in a bilayered structure can be obtained by adopting a tunnel layer that has a higher lattice binding energy than the transport layer. (C) 2010 American Institute of Physics. [doi:10.1063/1.3481076]
Publisher
AMER INST PHYSICS
Issue Date
2010-08
Language
English
Article Type
Article
Citation

APPLIED PHYSICS LETTERS, v.97, no.7, pp.072109

ISSN
0003-6951
DOI
10.1063/1.3481076
URI
http://hdl.handle.net/10203/95489
Appears in Collection
EE-Journal Papers(저널논문)
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