Substrate Biasing Effect during MgO Deposition in CoFeB/MgO/CoFeB MTJs

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High tunneling magnetoresistance (TMR) ratio and low RA in magnetic tunnel junctions are necessary condition for application in magnetic random access memory. To get high TMR ratio and low RA, good quality of MgO (002) insulating layer is important. To increase crystalline quality of MgO (002) layer, we applied negative bias on the substrate during MgO deposition. We report the results of the tunneling magnetoresistance (TMR) ratio and the resistance-area product (RA) for CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) with substrate bias voltage, and showed TMR increase and RA decrease with substrate bias. The effects of substrate bias voltage on the TMR ratio, RA and MgO (002) peak intensity are discussed.
Publisher
IEEE-Inst Electrical Electronics Engineers Inc
Issue Date
2009-06
Language
English
Article Type
Article; Proceedings Paper
Keywords

MAGNETIC TUNNEL-JUNCTIONS; ROOM-TEMPERATURE; MAGNETORESISTANCE; DEPENDENCE

Citation

IEEE TRANSACTIONS ON MAGNETICS, v.45, no.6, pp.2371 - 2373

ISSN
0018-9464
URI
http://hdl.handle.net/10203/95359
Appears in Collection
MS-Journal Papers(저널논문)
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