DC Field | Value | Language |
---|---|---|
dc.contributor.author | He, Wei | ko |
dc.contributor.author | Zhang, Lu | ko |
dc.contributor.author | Chan, Daniel S. H. | ko |
dc.contributor.author | Cho, BJ | ko |
dc.contributor.author | Zhang, L | ko |
dc.contributor.author | Cho, Byung Jin | ko |
dc.date.accessioned | 2013-03-09T03:55:57Z | - |
dc.date.available | 2013-03-09T03:55:57Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2009-06 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.30, no.6, pp.623 - 625 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/95297 | - |
dc.description.abstract | It is demonstrated that HfO2 films can have much higher dielectric-constant values than the usual reported value of 20-24 by optimized incorporation of lanthanurn element and crystallization to cubic structure. When HfO2 with 8% La is crystallized into cubic structure, the film exhibits the kappa value of similar to 38 which is the highest among ever reported HfO2-based high-kappa dielectrics. The increased kappa value of HfO2 with 8% La enables the leakage current to be reduced more than one order of magnitude lower, compared to amorphous-phase HfO2 under the same electric field. The dependence of film thickness and annealing temperature on the cubic crystallization is also reported. | - |
dc.language | English | - |
dc.publisher | IEEE | - |
dc.subject | OXIDE | - |
dc.title | Cubic-Structured HfO2 With Optimized Doping of Lanthanum for Higher Dielectric Constant | - |
dc.type | Article | - |
dc.identifier.wosid | 000266409200014 | - |
dc.identifier.scopusid | 2-s2.0-67649378973 | - |
dc.type.rims | ART | - |
dc.citation.volume | 30 | - |
dc.citation.issue | 6 | - |
dc.citation.beginningpage | 623 | - |
dc.citation.endingpage | 625 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2009.2020613 | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | He, Wei | - |
dc.contributor.nonIdAuthor | Zhang, Lu | - |
dc.contributor.nonIdAuthor | Chan, Daniel S. H. | - |
dc.contributor.nonIdAuthor | Cho, BJ | - |
dc.contributor.nonIdAuthor | Zhang, L | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Crystallization | - |
dc.subject.keywordAuthor | cubic structure | - |
dc.subject.keywordAuthor | hafnium oxide | - |
dc.subject.keywordAuthor | high-kappa | - |
dc.subject.keywordAuthor | dielectric | - |
dc.subject.keywordAuthor | lanthanum oxide | - |
dc.subject.keywordPlus | OXIDE | - |
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