Cubic-Structured HfO2 With Optimized Doping of Lanthanum for Higher Dielectric Constant

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It is demonstrated that HfO2 films can have much higher dielectric-constant values than the usual reported value of 20-24 by optimized incorporation of lanthanurn element and crystallization to cubic structure. When HfO2 with 8% La is crystallized into cubic structure, the film exhibits the kappa value of similar to 38 which is the highest among ever reported HfO2-based high-kappa dielectrics. The increased kappa value of HfO2 with 8% La enables the leakage current to be reduced more than one order of magnitude lower, compared to amorphous-phase HfO2 under the same electric field. The dependence of film thickness and annealing temperature on the cubic crystallization is also reported.
Publisher
IEEE
Issue Date
2009-06
Language
English
Article Type
Article
Keywords

OXIDE

Citation

IEEE ELECTRON DEVICE LETTERS, v.30, no.6, pp.623 - 625

ISSN
0741-3106
DOI
10.1109/LED.2009.2020613
URI
http://hdl.handle.net/10203/95297
Appears in Collection
EE-Journal Papers(저널논문)
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