Biristor-Bistable Resistor Based on a Silicon Nanowire

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dc.contributor.authorHan, Jin-Wooko
dc.contributor.authorChoi, Yang-Kyuko
dc.date.accessioned2013-03-09T03:31:59Z-
dc.date.available2013-03-09T03:31:59Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2010-08-
dc.identifier.citationIEEE ELECTRON DEVICE LETTERS, v.31, no.8, pp.797 - 799-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10203/95252-
dc.description.abstractA circuit element, named bistable resistor (or biristor), is proposed. The biristor has two stable resistance states. A high resistance state and low leakage current are maintained until an applied voltage reaches a latch-up voltage to trigger an avalanche effect. A low resistance state and high current are attained at voltage above the latch up. The low resistance state is latched until the applied voltage decreases down to the latch-down voltage. Bistable resistance states are achieved between the latch-down and the latch-up voltage. In addition, an optical stimulus appears to reduce the latch voltages.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectBIPOLAR-TRANSISTORS-
dc.subjectCELL-
dc.titleBiristor-Bistable Resistor Based on a Silicon Nanowire-
dc.typeArticle-
dc.identifier.wosid000283376800007-
dc.identifier.scopusid2-s2.0-77955176317-
dc.type.rimsART-
dc.citation.volume31-
dc.citation.issue8-
dc.citation.beginningpage797-
dc.citation.endingpage799-
dc.citation.publicationnameIEEE ELECTRON DEVICE LETTERS-
dc.identifier.doi10.1109/LED.2010.2051405-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorBistable resistor (biristor)-
dc.subject.keywordAuthorn-p-n-
dc.subject.keywordAuthorp-n-p-
dc.subject.keywordAuthorsilicon nanowire-
dc.subject.keywordAuthortwo terminals-
dc.subject.keywordPlusBIPOLAR-TRANSISTORS-
dc.subject.keywordPlusCELL-
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