Designed Workfunction Engineering of Double-Stacked Metal Nanocrystals for Nonvolatile Memory Application

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A double-stacked nanocrystal (DSNC) Hash memory is presented for improvement of both program/erase speed and data retention time. Four combinations of nickel (Ni) and gold (An) (Ni/Ni, Au/Au, Ni/Au, and Au/Ni) are used as charge storage DSNC materials and are compared from the perspective of memory performance, Through experimental results for P/E efficiency and retention time, the optimized energy band lineup for faster P/E, and longer charge retention is presented. A combination of a deep potential well at the top and a shallow potential well at the bottom exhibits optimized performance in P/E, and this combination also shows the longest data retention characteristics.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2009-03
Language
English
Article Type
Article
Keywords

RETENTION; DEVICES; OXIDE; GATE

Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.3, pp.377 - 382

ISSN
0018-9383
DOI
10.1109/TED.2008.2011677
URI
http://hdl.handle.net/10203/95202
Appears in Collection
EE-Journal Papers(저널논문)
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