Evidence of Al induced conducting filament formation in Al/amorphous silicon/Al resistive switching memory device

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We demonstrated that an Al/p-type amorphous silicon (p-a-Si)/Al switching device exhibits stable, nonvolatile resistive switching characteristics as well as reliable data retention at 85 degrees C. It is directly observed that the conducting filament is created after electroforming and incorporates the top metal migrated or diffused into a-Si layer. In addition, by analyzing the constitution of the conducting filament, we investigated the microscopic nature of the conducting filament. These results suggest that the Al/p-a-Si/Al device has potential for future nonvolatile memory applications.
Publisher
AMER INST PHYSICS
Issue Date
2010-02
Language
English
Article Type
Article
Citation

APPLIED PHYSICS LETTERS, v.96, no.5

ISSN
0003-6951
DOI
10.1063/1.3308471
URI
http://hdl.handle.net/10203/95069
Appears in Collection
EE-Journal Papers(저널논문)
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