Fabrication of flexible CIGS solar cell on stainless steel substrate by co-evaporation process

Silicone dioxide (SiO2) layer as an electrical insulator and diffusion barrier was deposited on a flexible stainless steel substrate by plasma enhanced CVD process. And we deposited Mo/Na-doped Mo bi-layer back contact on the oxide layer in order to supply Na into the CIGS absorber. Then we deposited CIGS layer by three-stage process using elemental co-evaporation method and completed the solar cell fabrication. Without antireflection coating, the best CIGS solar cell on the stainless steel showed the conversion efficiency of 10.57 % with Jsc = 33.38 mA/cm and V oc = 0.519 V and FF = 0.61 for an active area of 0.45 cm.
Publisher
Scitec Publications Ltd.
Issue Date
2007
Language
ENG
Citation

DIFFUSIONT AND DEFECT DATA PT.B: SOLID STATE PHENOMENA, v.124-126, no.PART 1, pp.73 - 76

ISSN
1012-0394
URI
http://hdl.handle.net/10203/9505
Appears in Collection
MS-Journal Papers(저널논문)
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