Microstructural characterization of polycrystalline Si films grown by vapor-induced crystallization of amorphous Si using Al/Ni chloride

A polycrystalline Si film with uniform and large grains can be grown by crystallizing with Al/Ni chloride vapor transport. At the initial stage of crystallization, the poly-Si grains had round-shaped cores with needles at the growth front. It showed that the needles were grown by the Ni-induced lateral crystallization process and the sidewall of the needles was enlarged by the Al-induced crystallization process. The needles were emerged coherently to an extent by the sidewall growth. As a result, a poly-Si film with grains larger than 15 mu m diam and fewer intragrain defects was obtained. The Ni concentration was constant through out the film thickness with a value of 1 x 10(19) cm(-3). The Al concentration at the surface was 10(19) cm(-3) and was reduced below 10(16) cm(-3) at 25 -nm depth. The thin film transistor utilizing the film showed an electron mobility of 47 cm(2)/V s at a drain voltage of V-d = 0.1. But the threshold voltage was 5.2 V that is considered as relatively high due to Al doping. (c) 2007 The Electrochemical Society.
Publisher
ELECTROCHEMICAL SOC INC
Issue Date
2007
Language
ENG
Keywords

ALUMINUM-INDUCED CRYSTALLIZATION; LOW-TEMPERATURE CRYSTALLIZATION; INDUCED LATERAL CRYSTALLIZATION; SILICON THIN-FILMS; ELECTRICAL CHARACTERISTICS; TRANSISTORS; LAYER

Citation

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.154, no.3, pp.194 - 197

ISSN
0013-4651
DOI
10.1149/1.2429047
URI
http://hdl.handle.net/10203/9500
Appears in Collection
MS-Journal Papers(저널논문)
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