Dual-Mode High-Dynamic Range Class E HBT Power Amplifier for WCDMA EER Transmitter

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This letter demonstrates a high-dynamic range GaAs heterojunction bipolar transistor Class E power amplifier (PA) for a WCDMA envelope elimination and restoration transmitter using a dual-mode amplification. An impedance optimization can operate the lossless high-power Class E mode and lossless low-power Class AB mode. This PA has a high dynamic range of -50 dBm to 27 dBm and obtains a remarkably improved efficiency of 9% and 27% power-added efficiency (PAE) at output powers of 0 dBm and 10 dBm, respectively, for low-power mode, and 40% and 48% PAE at 20 and 27 dBm, respectively, for high-power mode.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2010-10
Language
English
Article Type
Article
Keywords

POLAR TRANSMITTER

Citation

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.20, pp.572 - 574

ISSN
1531-1309
DOI
10.1109/LMWC.2010.2066263
URI
http://hdl.handle.net/10203/94966
Appears in Collection
EE-Journal Papers(저널논문)
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