LOW-TEMPERATURE FORMATION OF EPITAXIAL TL2CA2BA2CU3O10 THIN-FILMS IN REDUCED O2 PRESSURE

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dc.contributor.authorLee, WYko
dc.contributor.authorGarrison, SMko
dc.contributor.authorKawasaki, Mko
dc.contributor.authorVenturini, ELko
dc.contributor.authorAhn, Byung Taeko
dc.contributor.authorBoyers, Rko
dc.contributor.authorSalem, Jko
dc.contributor.authorSavoy, Rko
dc.contributor.authorVazquez, Jko
dc.date.accessioned2009-06-17T02:01:23Z-
dc.date.available2009-06-17T02:01:23Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued1992-02-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.60, no.6, pp.772 - 774-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/9491-
dc.description.abstractEpitaxial Tl2Ca2Ba2Cu3O10 films on (100) LaAlO3 are prepared by post-annealing 2Tl:2Ca:2Ba:3Cu precursor films at 830-860-degrees-C in congruent-to 0.03-0.15 atm of O2. These films (0.2-1.1-mu-m thickness) are smooth and shiny to the eye, and have a sharp zero resistance and onset diamagnetic transition temperature of 117-121 K. Transport critical current densities of 1.6 x 10(6) A/cm2 at 77 K and congruent-to 10(5) A/cm2 at 100 K are obtained for a 0.38-mu-m-thick film in magnetic fields up to 100 Oe. Strong flux pinning at low temperatures is inferred from the weak-field dependence of the critical current density calculated from magnetic hysteresis loops. At 5 K, the best film has a magnetic critical current density of 9 x 10(6) A/cm2 in zero field, decreasing gradually to 1.5 x 10(6) A/cm2 in a 5-T field.-
dc.description.sponsorshipPart of this work was conducted under the auspices of the Consortium for Superconducting Electronics. We are grateful to J. Lacey of IBM T. J. Watson Research Center for his skillful assistance in the critical current density measurements. Work at Sandia National Laboratories was supported by the U. S. Department of Energy, Office of Basic Energy Science, under Contract No. DE-ACO4-76DPOO789.en
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherAMER INST PHYSICS-
dc.subjectAC-SUSCEPTIBILITY MEASUREMENTS-
dc.subjectBULK SUPERCONDUCTIVITY-
dc.subjectYBACUO FILMS-
dc.subjectSYSTEM-
dc.subjectRESISTANCE-
dc.subjectOXIDES-
dc.subject120-K-
dc.titleLOW-TEMPERATURE FORMATION OF EPITAXIAL TL2CA2BA2CU3O10 THIN-FILMS IN REDUCED O2 PRESSURE-
dc.typeArticle-
dc.identifier.wosidA1992HC82000037-
dc.identifier.scopusid2-s2.0-36448998868-
dc.type.rimsART-
dc.citation.volume60-
dc.citation.issue6-
dc.citation.beginningpage772-
dc.citation.endingpage774-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.identifier.doi10.1063/1.106515-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorAhn, Byung Tae-
dc.contributor.nonIdAuthorLee, WY-
dc.contributor.nonIdAuthorGarrison, SM-
dc.contributor.nonIdAuthorKawasaki, M-
dc.contributor.nonIdAuthorVenturini, EL-
dc.contributor.nonIdAuthorBoyers, R-
dc.contributor.nonIdAuthorSalem, J-
dc.contributor.nonIdAuthorSavoy, R-
dc.contributor.nonIdAuthorVazquez, J-
dc.type.journalArticleArticle-
dc.subject.keywordPlusAC-SUSCEPTIBILITY MEASUREMENTS-
dc.subject.keywordPlusBULK SUPERCONDUCTIVITY-
dc.subject.keywordPlusYBACUO FILMS-
dc.subject.keywordPlusSYSTEM-
dc.subject.keywordPlusRESISTANCE-
dc.subject.keywordPlusOXIDES-
dc.subject.keywordPlus120-K-
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