High-Performance MIM Capacitors Using HfLaO-Based Dielectrics

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Metal-insulator-metal (MIM) capacitors fabricated with (8%) La-doped HfO(2) single layer as well as HfLaO/LaAlO(3)/HfLaO multilayer dielectric stack are demonstrated. While the La-doped HfO(2) single layer is crystallized at 420 degrees C annealing, HfLaO/LaAlO(3)/HfLaO multilayer dielectric stack remains amorphous. A high dielectric-constant value of 38 can be obtained when 8% La-doped HfO(2) is crystallized into cubiclike structure. However, it is observed that the linearity of MIM capacitor is degraded upon crystallization. The multilayer film has lower average dielectric constant but shows low quadratic voltage linearity of less than 1000 ppm/V(2) up to a capacitance density of 9 fF/mu m(2). It is observed that the HfLaO single-layer MIM is suitable for the applications with requirements of high capacitance density and robust reliability, while the multilayer MIM is suitable for a precision circuit.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2010-01
Language
English
Article Type
Article
Keywords

FILMS; HFO2

Citation

IEEE ELECTRON DEVICE LETTERS, v.31, no.1, pp.17 - 19

ISSN
0741-3106
DOI
10.1109/LED.2009.2034545
URI
http://hdl.handle.net/10203/94719
Appears in Collection
EE-Journal Papers(저널논문)
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