Low-Voltage High-Performance Pentacene Thin-Film Transistors With Ultrathin PVP/High-kappa HfLaO Hybrid Gate Dielectric

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Low-voltage and high-performance pentacene thin-film transistors with a hybrid gate dielectric consisting of ultrathin PVP (8 nm) and a high-kappa HfLaO (20 nm) have been demonstrated. The hybrid gate dielectric exploits the advantages of both dielectrics, i.e., a good interface between the organic dielectric and channel material as well as the insulating properties of the inorganic metal-oxide, resulting in very low leakage current, hysteresis-free behavior, superior drain-current drivability, and successful operation at -2 V. The superior device performance is attributed to good intermolecular ordering and the large grain size of the pentacene channel layer formed on the hybrid dielectric.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2010-11
Language
English
Article Type
Article
Keywords

INVERTERS

Citation

IEEE ELECTRON DEVICE LETTERS, v.31, no.11, pp.1308 - 1310

ISSN
0741-3106
DOI
10.1109/LED.2010.2066542
URI
http://hdl.handle.net/10203/94211
Appears in Collection
EE-Journal Papers(저널논문)
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