A New Charge-Pumping Technique for a Double-Gated SOI MOSFET Using Pulsed Drain Current Transients

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 610
  • Download : 0
A novel interface characterization technique is proposed to extract interface trap density Nit in fully depleted silicon-on-insulator MOSFETs. The proposed technique utilizes the temporal variation of the drain current, which is caused by the application of a single pulse to the gate in order to trigger charge pumping (CP). Vacant interface traps created as a result of recombination through the CP effect are gradually filled by carriers generated from a floating body (FB). By the characterization of this transient phenomenon, the interface trap density is directly extracted from FB devices without extra body contacts.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2012-01
Language
English
Article Type
Article
Keywords

LIFETIME MEASUREMENT; CARRIER GENERATION; THIN-FILM; TRANSISTORS; ENHANCEMENT

Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.59, no.1, pp.241 - 246

ISSN
0018-9383
DOI
10.1109/TED.2011.2171489
URI
http://hdl.handle.net/10203/94134
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0