Wide memory window in graphene oxide charge storage nodes

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Solution-processable, isolated graphene oxide (GO) monolayers have been used as a charge trapping dielectric in TaN gate/Al(2)O(3)/isolated GO sheets/SiO(2)/p-Si memory device (TANOS). The TANOS type structure serves as memory device with the threshold voltage controlled by the amount of charge trapped in the GO sheet. Capacitance-Voltage hysteresis curves reveal a 7.5 V memory window using the sweep voltage of -5-14 V. Thermal reduction in the GO to graphene reduces the memory window to 1.4 V. The unique charge trapping properties of GO points to the potential applications in flexible organic memory devices.
Publisher
AMER INST PHYSICS
Issue Date
2010-04
Language
English
Article Type
Article
Keywords

GRAPHITE OXIDE; FUNCTIONALIZED GRAPHENE; DEVICES; LAYER

Citation

APPLIED PHYSICS LETTERS, v.96, no.14

ISSN
0003-6951
DOI
10.1063/1.3383234
URI
http://hdl.handle.net/10203/94086
Appears in Collection
EE-Journal Papers(저널논문)
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