Towards Gigahertz Operation: Ultrafast Low Turn-on Organic Diodes and Rectifiers Based on C-60 and Tungsten Oxide

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Ultrafast organic diodes with low turn-on voltage based on a junction between C-60 and WO3 are proposed. The high electron mobility of C-60 layers and the optimal work function of hexamethyldisilazane (HMDS)-treated WO3 layers together provide ideal diode characteristics including high rectification ratio and low turn-on voltage. Ultrahigh frequency (UHF) compatible rectifiers with a low voltage drop are demonstrated with the C-60/Wo(3) diodes.
Publisher
WILEY-BLACKWELL
Issue Date
2011-02
Language
English
Article Type
Article
Keywords

THIN-FILM TRANSISTORS; LIGHT-EMITTING-DIODES; BAND-GAP; MOBILITY; SEMICONDUCTORS; PENTACENE; ELECTRODE

Citation

ADVANCED MATERIALS, v.23, no.5, pp.644 - 644

ISSN
0935-9648
DOI
10.1002/adma.201002246
URI
http://hdl.handle.net/10203/94035
Appears in Collection
EE-Journal Papers(저널논문)
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