Towards Gigahertz Operation: Ultrafast Low Turn-on Organic Diodes and Rectifiers Based on C-60 and Tungsten Oxide
Ultrafast organic diodes with low turn-on voltage based on a junction between C-60 and WO3 are proposed. The high electron mobility of C-60 layers and the optimal work function of hexamethyldisilazane (HMDS)-treated WO3 layers together provide ideal diode characteristics including high rectification ratio and low turn-on voltage. Ultrahigh frequency (UHF) compatible rectifiers with a low voltage drop are demonstrated with the C-60/Wo(3) diodes.
- Publisher
- WILEY-BLACKWELL
- Issue Date
- 2011-02
- Language
- English
- Article Type
- Article
- Keywords
THIN-FILM TRANSISTORS; LIGHT-EMITTING-DIODES; BAND-GAP; MOBILITY; SEMICONDUCTORS; PENTACENE; ELECTRODE
- Citation
ADVANCED MATERIALS, v.23, no.5, pp.644 - 644
- ISSN
- 0935-9648
- Appears in Collection
- EE-Journal Papers(저널논문)
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