Structure of SiO2 Films Grown at Low Temperature by Inductively Coupled Plasma Oxidation with Oxygen Gas

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The structure of silicon oxide films grown in inductively coupled plasma (ICP) with oxygen gas at temperatures ranging from 350 to 450 degrees C was studied. The thickness of the oxide ranged from 10 to 40 nm. A FTIR spectroscopy showed that the Si-O-Si bond angle was smaller than that in the high-temperature thermal oxide. The bond angle decreased as the oxide thickness decreased. An X-ray reflectivity analysis showed that the density of the ICP oxide (2.23 g/cm(3)) was larger than that of thermal oxide (2.20 g/cm(3)) grown at 900 degrees C. The accumulation of compressive stress could be the cause of small bond angles and the high density in the ICP oxide. A very thin surface layer with a lower density was also detected on the as-grown ICP oxide. The ICP oxide showed a high etch rate and low refractive index as the oxide thickness decreased, indicating that these chemical and physical properties were strongly affected by the magnitude of the Si-O-Si bond angle.
Publisher
KOREAN INST METALS MATERIALS
Issue Date
2005-12
Language
English
Article Type
Article
Citation

ELECTRONIC MATERIALS LETTERS, v.1, no.2, pp.97 - 102

ISSN
1738-8090
URI
http://hdl.handle.net/10203/9395
Appears in Collection
MS-Journal Papers(저널논문)
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