In situ growth of an epitaxial CoSi2 layer on a Si(100) substrate by reactive chemical-vapor deposition using a cobalt metallorganic source

Uniform epitaxial CoSi2 layers have been grown in situ on a (100) Si substrate at temperatures above 600 degrees C by reactive chemical-vapor deposition of cyclopentadienyl dicarbonyl cobalt, Co(eta(5)-C5H5)(CO)(2). Co-rich phases such as Co2Si and CoSi were suppressed during cobalt metallorganic chemical-vapor deposition at substrate temperatures above 500 degrees C. A thin carbon layer was found on the top of the epitaxial CoSi2 layer grown on the Si substrate due to incomplete decomposition of the cobalt metallorganic source and diffusion of Co into the Si substrate. In spite of the existence of a surface carbon layer, an ion channeling minimum yield, chi(min), of 8% in Rutherford backscattering/channeling spectrometry has been achieved in the epitaxial layer, indicating a nearly perfect epitaxial order. The carbon pileup on the surface of the CoSi2 layer at the initial stage of Co deposition seems to play the role of a cobalt diffusion barrier, avoiding the formation of Co-rich phases. (C) 1999 American Institute of Physics. [S0003-6951(99)02021-5].
Publisher
AMER INST PHYSICS
Issue Date
1999-05
Language
ENG
Keywords

SILICIDE FORMATION; OMCVD

Citation

APPLIED PHYSICS LETTERS, v.74, no.21, pp.3176 - 3178

ISSN
0003-6951
URI
http://hdl.handle.net/10203/9390
Appears in Collection
MS-Journal Papers(저널논문)
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