Three-dimensional interconnect for multilayer module packages with selectively anodised aluminium substrate

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It is reported that 3-D interconnects fabricated with a selectively anodised aluminium process for a multilayer module package can be used to evaluate high-frequency performance. The proposed method of fabricating vertical interconnects is easier and more cost-effective than other RF MEMS processes. To transfer RF signals vertically, coaxial hermetic seal vias with characteristic 50 V impedances and embedded anodised aluminium vias with a solder ball attachment and flip-chip bonding were used. The optimised interconnect structure demonstrated RF characteristics with an insertion loss of less than 1.55 dB and a return loss of less than 12.25 dB over a broad bandwidth ranging from 0.1 to 10 GHz. Experimental results suggest that the developed technology, which is based on selectively anodised aluminium, can be applied to new 3-D packaging solutions.
Publisher
Inst Engineering Technology-Iet
Issue Date
2009-06
Language
English
Article Type
Article
Keywords

TECHNOLOGY

Citation

ELECTRONICS LETTERS, v.45, no.13, pp.678 - 680

ISSN
0013-5194
DOI
10.1049/el.2009.3588
URI
http://hdl.handle.net/10203/93836
Appears in Collection
EE-Journal Papers(저널논문)
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