Effect of UV-O-2, NF3/H-2 surface preparation on the crystalline defects in silicon homoepitaxy (Part I. A study on photochemical surface preparation in series)

In this work, the organic residue and oxide on silicon wafer were treated with UV-excited oxygen and trifluoronitrogen gases as a pro-treatment for silicon homoepitaxy. A typical positive photo resist, AZ 1512, was coated as a model organic residue. UV-O-2 cleaning (UVOC) and UV-NF3/H-2 treatment removed the organic residue and native oxide layer, respectively, for silicon epitaxial growth. A study of removal rate showed that the processing temperature is a more critical process parameter than pressure. Besides, hydrogen dilution improves the surface roughness of UV-NF3-treated surface as shown in the atomic force microscope images. (C) 2002 Published by Elsevier Science B.V.
Publisher
ELSEVIER SCIENCE BV
Issue Date
2002-04
Language
ENG
Keywords

EPITAXY; TRANSISTOR; REMOVAL; GAS

Citation

JOURNAL OF CRYSTAL GROWTH, v.237, no.2, pp.1399 - 1403

ISSN
0022-0248
URI
http://hdl.handle.net/10203/9363
Appears in Collection
CBE-Journal Papers(저널논문)
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