Nanocrystalline Diamond Gate FET for ON-State Current Improvement

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A nanocrystalline diamond gate field-effect transistor (FET) is demonstrated for the improvement of ON-state current with a CMOS-compatible process. A nanocrystalline diamond film was deposited on a Si(3)N(4)/SiO(2) gate dielectric as a gate material. The diamond thin film served as a gate electrode; hence, an n-channel FET was successfully demonstrated. As a control group, a polysilicon gate FET with the same structure was also fabricated. Compared to the polysilicon gate FET, the diamond gate FET showed doubled ON-state current, which was primarily attributed to the strain effect of the diamond gate acting on the channel.
Publisher
IEEE-Inst Electrical Electronics Engineers Inc
Issue Date
2010-10
Language
English
Article Type
Article
Keywords

FIELD-EFFECT TRANSISTORS; FILMS; CVD

Citation

IEEE ELECTRON DEVICE LETTERS, v.31, no.10, pp.1152 - 1154

ISSN
0741-3106
DOI
10.1109/LED.2010.2058992
URI
http://hdl.handle.net/10203/93371
Appears in Collection
EE-Journal Papers(저널논문)
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