Organic-inorganic hybrid materials as solution processible gate insulator for organic thin film transistors

We synthesized organic-inorganic hybrid materials (hybrimers) using a simple non-hydrolytic sol-gel reaction and applied the materials as gate insulators in organic thin film transistors (OTFTs). The hybrimer thin films had smooth and hydrophobic surfaces, and were stable with solvents. In addition, the hybrimer thin films had good electrical properties such as low leakage current and high dielectric strength. The performance of the OTFT with hybrimer gate insulator fabricated by drop casting of regioregular poly(3-hexylthiophene) (P3HT) was similar to that of OTFT with hexamethyldisilazane (HMDS) treated thermally grown SiO2. The hysteresis of RR-P3HT based OTFT with hybrimer gate insulator was negligible. (c) 2007 Elsevier B.V. All rights reserved.
Publisher
Elsevier Science Bv
Issue Date
2007-12
Language
ENG
Keywords

FIELD-EFFECT TRANSISTORS; HIGH-PERFORMANCE; MOBILITY; FABRICATION; DISPLAYS

Citation

ORGANIC ELECTRONICS, v.8, no.6, pp.743 - 748

ISSN
1566-1199
DOI
10.1016/j.orgel.2007.06.006
URI
http://hdl.handle.net/10203/9320
Appears in Collection
MS-Journal Papers(저널논문)
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