Selective barrier perforation in porous alumina anodized on substrates

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A new method for perforating the barrier oxide at the base of pores in alumina, which does not involve etching of the alumina, is reported. Anodization of Al layers on W leads to formation of WO3 "Plugs" that can be selectively etched without widening the as-anodized pores. We demonstrate this technique, used with templated pore formation, by creating Ni nanoelectrode arrays with fixed electrode spacings (200 nm) but varied electrode diameters.
Publisher
WILEY-V C H VERLAG GMBH
Issue Date
2008-04
Language
English
Article Type
Article
Keywords

CARBON NANOTUBES; NANOWIRE ARRAYS; SILICON; FABRICATION; GROWTH; LAYERS; FILMS

Citation

ADVANCED MATERIALS, v.20, no.7, pp.1368 - 1368

ISSN
0935-9648
DOI
10.1002/adma.200701719
URI
http://hdl.handle.net/10203/93173
Appears in Collection
EEW-Journal Papers(저널논문)
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